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Facile hydrothermal assisted synthesis of time dependent Cu2S thin films for efficient photoelectrochemical application
In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at different deposition time via single step hydrothermal route. The synthesized Cu 2 S thin films characterized for their optostructural, morphological, compositional and photoelecrochemical properties as f...
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Published in: | Journal of materials science. Materials in electronics 2018-11, Vol.29 (22), p.19322-19335 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In present investigation, we have successfully synthesized nanocrystalline Cu
2
S thin films at different deposition time via single step hydrothermal route. The synthesized Cu
2
S thin films characterized for their optostructural, morphological, compositional and photoelecrochemical properties as function of deposition time. Thickness of deposited Cu
2
S thin films increases with increase in deposition time. The optical studies revealed that band gap of Cu
2
S thin films decrease with increase in deposition time. Structural study confirm that Cu
2
S thin films are nanocrystalline in nature with pure hexagonal crystal structure. Crystallite size were increases with increase in deposition time. Raman spectrum shows the presence of sharp band at 472 cm
−1
confirms the formation of pure phase hexagonal Cu
2
S thin film. Scanning electron microscopy micrographs of Cu
2
S thin films demonstrate that significant change in surface morphology. The high resolution transmission electron microscopy and selected area emission diffraction study indicate that nanocrystalline Cu
2
S thin films formation. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy show the presence of elements and preferred valence state with stoichiometric composition of the Cu
2
S thin films. electron impedance spectroscopy reveals that charge transfer resistance (R
ct
) decreases with increase in deposition time. From J–V measurements, it was found that, Cu
2
S thin films shows maximum conversion efficiency is 0.27% for film after deposition of 6 h. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-018-0059-0 |