Wetting layer effect on impurity-related electronic properties of different (In,Ga)N QD-shapes

In this paper, we have investigated the electronic properties of (In,Ga)N/GaN coupled wetting layer-quantum dot system using the numerical approach. The finite element method code is used to solve the Schrödinger equation, in the presence of the impurity. In our model, parallelepiped-shape, circular...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2018-05, Vol.537, p.207-211
Main Authors: El Ghazi, Haddou, Jorio, Anouar, Zorkani, Izeddine, Feddi, El Mustapha, El Mouchtachi, Ahmed
Format: Article
Language:English
Subjects:
Binding energy
Eigenvalues
Finite element analysis
Finite element method
Gallium nitride epitaxy
Impurities
Mathematical models
Nanostructured materials
Parallelepipeds
Potential barriers
Properties (attributes)
Quantum dots
Schrodinger equation
Semiconductors
Wetting
Wetting layer
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Summary:In this paper, we have investigated the electronic properties of (In,Ga)N/GaN coupled wetting layer-quantum dot system using the numerical approach. The finite element method code is used to solve the Schrödinger equation, in the presence of the impurity. In our model, parallelepiped-shape, circular and square based-pyramidal and their wetting layers embedded in GaN matrix were considered. Based on the single band parabolic and the effective mass approximations, the envelop function and its corresponding energy eigenvalue are obtained assuming a finite potential barrier. Our results reveal that: (1) the wetting layer has a great influence on the electronic properties especially for a small quantum dot and acts in the opposite sense of the geometrical confinement, (2) a wetting layer-dependent critical QD-size is obtained limiting two different behaviors and (3) its effect is strongly-dependent on the quantum dot-shape. •The WL has a great influence on the electronic properties especially for small QDs.•The WL effect is strongly-dependent on the QD-shape.•The WL acts in the opposite sense of the geometrical confinement and its main effect is the reduction of the binding energy.•A wetting layer-dependent critical QD-size is obtained limiting two different behaviors.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2018.02.028