Highly transparent, strong, and flexible fluorographene/fluorinated polyimide nanocomposite films with low dielectric constant

Optimization of molecular interactions between filler materials and a polymer matrix is one of the key methods to improve the dielectric properties of composite films. In films composed of two-dimensional fluorographene (FG) and fluorinated polyimide (f-PI), the repulsion between the C–F bonds hinde...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (24), p.6378-6384
Main Authors: Yin, Xiaodong, Feng, Yiyu, Zhao, Qiang, Li, Yu, Li, Shuangwen, Dong, Huanli, Hu, Wenping, Feng, Wei
Format: Article
Language:English
Subjects:
Dielectric properties
Dielectric strength
Dispersion
Filler materials
Fluorination
Molecular chains
Molecular interactions
Nanocomposites
Optical properties
Permittivity
Polyimide resins
Thin films
Transistors
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Summary:Optimization of molecular interactions between filler materials and a polymer matrix is one of the key methods to improve the dielectric properties of composite films. In films composed of two-dimensional fluorographene (FG) and fluorinated polyimide (f-PI), the repulsion between the C–F bonds hinders the dispersion of the filler in the matrix. In this work, we describe a low dielectric constant FG/f-PI nanocomposite film obtained by the preparation of f-PI on exfoliated FG grafted with 2,2′-bis(trifluoromethyl)-[1,1′-biphenyl]-4,4′-diamine (t-FG). The strong interfacial interaction between f-PI and t-FG promotes the dispersion of t-FG in the f-PI matrix. The effects of the addition of t-FG on the optical, mechanical, and dielectric properties of the composite film are investigated by incorporating different amounts of t-FG. When the t-FG content reaches 0.75 wt%, we obtain a transparent, strong, and flexible t-FG/f-PI composite film, which exhibits a low dielectric constant (2.09) and a high tensile strength (300.1 MPa). An organic thin-film transistor fabricated using this film as a dielectric layer exhibits good transistor mobility and ON/OFF ratio. t-FG/f-PI dielectric films are therefore suitable for application in transparent flexible displays.
ISSN:2050-7526
2050-7534
DOI:10.1039/C8TC00998H