Role of the substrate on the growth of silicon quantum dots embedded in silicon nitride thin films

By using a remote plasma enhanced chemical vapor deposition system, we grow a silicon rich silicon nitride thin film on the surface of five different substrates: silicon wafer, fused silica, highly oriented pyrolytic graphite, muscovite mica and potassium chloride. By means of high-resolution transm...

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Bibliographic Details
Published in:Materials chemistry and physics 2018-04, Vol.208, p.61-67
Main Authors: Rodríguez-Gómez, A., Moreno-Rios, M., García-García, R., Pérez-Martínez, A.L., Reyes-Gasga, J.
Format: Article
Language:English
Subjects:
Fused silica
HRTEM
Mica
Muscovite
Organic chemistry
Plasma enhanced chemical vapor deposition
Potassium chloride
Pyrolytic graphite
Quantum dots
RPECVD
Silicon
Silicon dioxide
Silicon nitride
Silicon quantum dots
Silicon substrates
Studies
Substrate chemistry
Substrate surface profile
Thin films
Transmission electron microscopy
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Summary:By using a remote plasma enhanced chemical vapor deposition system, we grow a silicon rich silicon nitride thin film on the surface of five different substrates: silicon wafer, fused silica, highly oriented pyrolytic graphite, muscovite mica and potassium chloride. By means of high-resolution transmission electron microscopy we studied the influence that each substrate has on the auto-formation of silicon quantum dots (≤4.2 nm) embedded in the grown film. We conjecture that the growth of the film is carried out by the formation of highly reactive intermediates that are chemisorbed on the substrate surface. We conclude proposing the hypothesis that the substrate surface profile has minimal influence on the growth of a silicon nitride thin film that can embed silicon quantum dots. •The influence of the substrate surface profile for the growth of SiQDs is studied.•The influence of the substrate chemistry for the growth of SiQDs is studied.•Substrate surface profile influence on the growth of SiQDs by RPECVD is minimal.•Frank–van der Merwe mechanism will promote the growth of embedded SiQDs.•Volmer-Weber mechanism will not promote the growth of embedded SiQDs.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2018.01.032