Fabrication and Study of Parameters and Properties of Nanostructured Membranes for MEMS Devices

The technology of forming blanks of nanostructured membranes for MEMS devices based on alternating Si 3 N 4 /SiO 2 layers with a nanometer thickness has been developed. A comprehensive study of the structure and composition of membranes using microanalysis methods based on spectroscopic ellipsometry...

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Bibliographic Details
Published in:Nanotechnologies in Russia 2017-07, Vol.12 (7-8), p.426-437
Main Authors: Dyuzhev, N. A., Gusev, E. E., Gryazneva, T. A., Dedkova, A. A., Dronova, D. A., Kireev, V. Yu, Kirilenko, E. P., Migunov, D. M., Novikov, D. V., Patyukov, N. N., Presnukhina, A. A., Bakun, A. D., Ermakov, D. S.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Electron microscopy
Industrial and Production Engineering
Machines
Manufacturing
Mass spectrometry
Materials Science
Membranes
Microelectromechanical systems
Nanostructure
Nanotechnology
Processes
Secondary ion mass spectrometry
Silicon dioxide
Silicon wafers
Spectroellipsometry
Thickness
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Summary:The technology of forming blanks of nanostructured membranes for MEMS devices based on alternating Si 3 N 4 /SiO 2 layers with a nanometer thickness has been developed. A comprehensive study of the structure and composition of membranes using microanalysis methods based on spectroscopic ellipsometry, scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), probe profilometry, and X-ray diffractometry is performed. The mechanical stress in silicon wafers with blanks of nanostructured membranes is experimentally determined.
ISSN:1995-0780
1995-0799
DOI:10.1134/S1995078017040073