Thallium indium germanium sulphide (TlInGe2S6) as efficient material for nonlinear optical application

Article reports design and synthesis, technology, crystal structure determination and results of photoinduced nonlinear optical investigations of novel TlInGe2S6 crystals. We have discovered TlInGe2S6 as a new type of laser induced nonlinear optical materials. Following the performed measurements we...

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Bibliographic Details
Published in:Journal of alloys and compounds 2018-02, Vol.735, p.1694-1702
Main Authors: Khyzhun, O.Y., Babizhetskyy, V.S., Kityk, I.V., Myronchuk, G.L., Jędryka, J., Lakshminarayana, G., Levytskyy, V.O., Tsisar, O.V., Piskach, L.V., Parasyuk, O.V., El Naggar, A.M., Albassam, A.A., Piasecki, M.
Format: Article
Language:English
Subjects:
Carbon dioxide
Carbon dioxide lasers
Crystal growth
Crystal structure
Energy gap
Germanium
Germanium sulfide
Indium
Irradiation
Laser beams
Neodymium lasers
Nonlinear optics
Optical materials
Optical properties
Semiconductor lasers
Semiconductors
Spectrum analysis
Stoichiometry
Surface matching
Thallium
Valence band
X ray photoelectron spectroscopy
XPS
YAG lasers
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Summary:Article reports design and synthesis, technology, crystal structure determination and results of photoinduced nonlinear optical investigations of novel TlInGe2S6 crystals. We have discovered TlInGe2S6 as a new type of laser induced nonlinear optical materials. Following the performed measurements we can use the titled crystals for laser operated coherent wavelength transformations. It was shown, that thin, photoinduced nanolayers formed by laser energies above the energy gap as well a near the phonon resonances possess promising nonlinear optical properties. Different types of cw lasers with the same powers of the photoinduced beams were used: SHG of the Nd:YAG laser (532 nm), fundamental Nd:YAG laser (1064 nm), and IR CO2 laser with wavelength of 9400 nm. The crystal structure of novel quaternary thallium indium germanium sulphide TlInGe2S6 determined by X-ray powder method possesses trigonal space group R3. The as-derived TlInGe2S6 crystalline alloy was probed employing the X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES) methods. Particularly, for the TlInGe2S6 alloy surface, both pristine and 3.0 keV Ar+ ion-irradiated, we have monitored the XPS valence-band and core-level spectra. These measurements indicate that the TlInGe2S6 surface is rather stable with respect to Ar+ ion-irradiation, which does not induce significantly near the surface layers sub-stoichiometry. Matching on a common energy scale of the XPS valence-band spectrum and the XES S Kβ1,3 and Ge Kβ2 bands indicates that main contributions of the S 3p and Ge 4p states are located in the upper and central portions of the valence band of TlInGe2S6, respectively, with significant contributions of these states in other valence-band parts as well. [Display omitted] •High quality TlInGe2S6 crystals has been successfully growth for first time.•The crystal structure of TlInGe2S6 determined by X-ray powder method was described as trigonal space group R3.•Electronic properties were probed employing the XPS and XES methods.•We have discovered TlInGe2S6 as a new type of laser induced nonlinear optical materials.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2017.11.257