Controllable seeded flux growth and optoelectronic properties of bulk o-SiP crystals

Two-dimensional (2D) materials have recently attracted great interest due to their promising optoelectronic applications. Orthorhombic SiP (o-SiP) is a 2D layered crystal and may have a significant impact on optoelectronic technologies. Large-sized bulk o-SiP single crystals have been successfully g...

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Bibliographic Details
Published in:CrystEngComm 2017, Vol.19 (46), p.6986-6991
Main Authors: Li, Chunlong, Wang, Shanpeng, Zhang, Xixia, Jia, Ning, Yu, Tongtong, Zhu, Min, Liu, Duo, Tao, Xutang
Format: Article
Language:English
Subjects:
Carrier mobility
Crystal growth
Crystals
Energy gap
Optoelectronics
Photonic band gaps
Single crystals
Stability
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Summary:Two-dimensional (2D) materials have recently attracted great interest due to their promising optoelectronic applications. Orthorhombic SiP (o-SiP) is a 2D layered crystal and may have a significant impact on optoelectronic technologies. Large-sized bulk o-SiP single crystals have been successfully grown by a seeded flux method. The size and morphology of o-SiP crystals can be controlled by changing the growth conditions. The carrier mobility and band gap of o-SiP were characterized in detail. The photoresponse properties of o-SiP were investigated and a relatively fast response has been demonstrated. The experimental results indicate that o-SiP may be an excellent candidate for applications in electronics and optoelectronics.
ISSN:1466-8033
1466-8033
DOI:10.1039/C7CE01676J