Chloride-intercalated continuous chemical vapor deposited graphene film with discrete adlayers

Heteroatom doping can open the bandgap and increase the carrier density, thus extending the applications of graphene. Iron chloride （FeC13） intercalation has proven to be an efficient method for the heavy doping of graphene. In this study, we prepared continuous chemical vapor deposited graphene （CV...

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Bibliographic Details
Published in:Nano research 2018, Vol.11 (1), p.440-448
Main Authors: Chen, Qiao, Zhang, Li, Zhu, Hongwei
Format: Article
Language:English
Subjects:
Atomic force microscopy
Atomic structure
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Carrier density
Chemical vapor deposition
Chemistry and Materials Science
Chlorides
Condensed Matter Physics
Crystals
Doping
Electrical conductivity
Electrical resistivity
Flakes
Graphene
Intercalation
Interlayers
Iron chlorides
Materials Science
Microscopy
Nanotechnology
Nanotubes
Raman spectra
Raman spectroscopy
Research Article
Vapors
氯化物
蒸汽
化学
设置
分离
电影
光电探测器
六角形
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Summary:Heteroatom doping can open the bandgap and increase the carrier density, thus extending the applications of graphene. Iron chloride （FeC13） intercalation has proven to be an efficient method for the heavy doping of graphene. In this study, we prepared continuous chemical vapor deposited graphene （CVD-G） consisting of hexagonal adlayer domains to study the FeC13 intercalation. The structure of the FeC13-treated CVD-G was easily characterized via atomic force microscopy because of the change in the interlayer distance. FeC13 crystals several nanometers thick were integrated with the graphene surface, and FeC13 layer flakes were intercalated between the CVD-G adlayers. The G-band position and two-dimensional band shape in the Raman spectra confirmed the intercalation of the FeC13 between the graphene layers. The FeCI~ intercalation increased the electrical conductivity of the CVD-G with a well-maintained transmittance, which could be beneficial for a sensitive photodetector.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-017-1651-y