Multi-imaging analysis of nascent surface structures generated during femtosecond laser irradiation of silicon in high vacuum

We report a correlative imaging analysis of a crystalline silicon target after irradiation with a low number of 1055 nm, ~ 850 fs laser pulses with several microscopy techniques (e.g., scanning electron microscopy, atomic force microscopy, Raman micro-imaging and confocal optical microscopy). The an...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2018-02, Vol.124 (2), p.1-8, Article 204
Main Authors: Gesuele, F., JJ Nivas, J., Fittipaldi, R., Altucci, C., Bruzzese, R., Maddalena, P., Amoruso, S.
Format: Article
Language:English
Subjects:
Applied physics
Atomic force microscopy
Characterization and Evaluation of Materials
Condensed Matter Physics
Correlation analysis
Crystal structure
Crystallinity
Electron microscopy
Femtosecond pulses
High vacuum
Imaging
Irradiation
Lasers
Machines
Manufacturing
Materials science
Microscopes
Microscopy
Nanotechnology
Optical and Electronic Materials
Optical microscopy
Physics
Physics and Astronomy
Pressure
Processes
Silicon
Surfaces and Interfaces
Thin Films
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Summary:We report a correlative imaging analysis of a crystalline silicon target after irradiation with a low number of 1055 nm, ~ 850 fs laser pulses with several microscopy techniques (e.g., scanning electron microscopy, atomic force microscopy, Raman micro-imaging and confocal optical microscopy). The analysis is carried out on samples irradiated both in high vacuum and at atmospheric pressure conditions, evidencing interesting differences induced by the ambient environment. In high-vacuum conditions, the results evidence the formation of a halo, which is constituted by alternate stripes of amorphous and crystalline silicon, around the nascent ablation crater. In air, such an effect is drastically reduced, due to the significant back-deposition of nanoparticulate material induced by the larger ambient pressure.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-018-1633-2