Reduced high temperature dielectric loss in BSB glass modified Ba0.3Sr0.7TiO3 ceramics for energy storage

B 2 O 3 –SiO 2 –Bi 2 O 3 –CaO–BaO glass was used to lower the sintering temperature of paraelectric Ba 0.3 Sr 0.7 TiO 3 ceramics. The effect of B 2 O 3 –SiO 2 –Bi 2 O 3 –CaO–BaO glass doping amount on the structure, dielectric properties and energy storage characteristics of the ceramics was investi...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2018, Vol.29 (2), p.1093-1097
Main Authors: Shen, Zong-Yang, Yu, Yuan-Ying, Wang, Yu, Zhang, Li, Luo, Wen-Qin, Wang, Zhu-Mei, Li, Yue-Ming
Format: Article
Language:English
Subjects:
Barium oxides
Bismuth oxides
Bismuth trioxide
Boron oxides
Ceramics
Characterization and Evaluation of Materials
Chemistry and Materials Science
Dielectric loss
Dielectric properties
Dielectric strength
Doping
Energy storage
High temperature
Materials Science
Optical and Electronic Materials
Silicon dioxide
Temperature
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Summary:B 2 O 3 –SiO 2 –Bi 2 O 3 –CaO–BaO glass was used to lower the sintering temperature of paraelectric Ba 0.3 Sr 0.7 TiO 3 ceramics. The effect of B 2 O 3 –SiO 2 –Bi 2 O 3 –CaO–BaO glass doping amount on the structure, dielectric properties and energy storage characteristics of the ceramics was investigated. Due to the doping of glass, the room temperature dielectric constant of the ceramics was gradually decreased from 650 to 380 (@ 1 kHz), while the electrical breakdown strength enhanced by > 20%. Especially, the dielectric loss of the ceramics at high temperatures (> 150 °C) was strongly reduced after glass doping. At the measuring temperature of 200 °C, the dielectric loss of glass doped Ba 0.3 Sr 0.7 TiO 3 ceramics (tan δ   25%). The ceramics with glass doping amount of 2.0 wt.% sintered at a lowered temperature of 1150 °C, possessing a relatively high energy storage density ( γ  = 0.47 J/cm 3 ) and efficiency ( η  = 90.3%) under an applied electric field of 135 kV/cm, should be promising for solid state compact pulsed power electronics at elevated temperatures.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-017-8010-3