The Effect of Post-Baking Temperature and Thickness of ZnO Electron Transport Layers for Efficient Planar Heterojunction Organometal-Trihalide Perovskite Solar Cells

Solution-processed zinc oxide (ZnO)-based planar heterojunction perovskite photovoltaic device is reported in this study. The photovoltaic device benefits from the ZnO film as a high-conductivity and high-transparent electron transport layer. The optimal electron transport layer thickness and post-b...

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Bibliographic Details
Published in:Coatings (Basel) 2017-12, Vol.7 (12), p.215
Main Authors: Lee, Kun-Mu, Lin, Chuan-Jung, Chang, Yin-Hsuan, Lin, Ting-Han, Suryanarayanan, Vembu, Wu, Ming-Chung
Format: Article
Language:English
Subjects:
Baking
Electron microscopy
Electron transport
Electrons
Energy conversion efficiency
Heterojunctions
Open circuit voltage
Photoluminescence
Photovoltaic cells
Short circuits
Solar cells
Thickness
Zinc oxide
Zinc oxides
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Summary:Solution-processed zinc oxide (ZnO)-based planar heterojunction perovskite photovoltaic device is reported in this study. The photovoltaic device benefits from the ZnO film as a high-conductivity and high-transparent electron transport layer. The optimal electron transport layer thickness and post-baking temperature for ZnO are systematically studied by scanning electron microscopy, photoluminescence and time-resolved photoluminescence spectroscopy, and X-ray diffraction. Optimized perovskite solar cells (PSCs) show an open-circuit voltage, a short-circuit current density, and a fill factor of 1.04 V, 18.71 mA/cm2, and 70.2%, respectively. The highest power conversion efficiency of 13.66% was obtained when the device was prepared with a ZnO electron transport layer with a thickness of ~20 nm and when post-baking at 180 °C for 30 min. Finally, the stability of the highest performance ZnO-based PSCs without encapsulation was investigated in detail.
ISSN:2079-6412
2079-6412
DOI:10.3390/coatings7120215