Accurate De-Embedding and Measurement of Spin-Torque Oscillators

We present a method for accurately de-embedding the electrical effects of the bias and measurement electrode structure used for spin-torque oscillator (STO) measurements. We propose a simple, but very accurate, method that requires only one additional test structure per STO wafer. We show that the e...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2017-11, Vol.53 (11), p.1-4
Main Authors: Abbasi, M., Wang, B., Tamaru, S., Kubota, H., Fukushima, A., Ricketts, D. S.
Format: Article
Language:English
Subjects:
Conductivity
Electrodes
Giant magnetoresistive
Insertion loss
Integrated circuit modeling
Loss measurement
magnetic tunnel junction (MTJ)
Magnetism
oscillator
Oscillators
Semiconductor device modeling
spin-torque oscillator (STO)
Substrates
Torque
Transmission line measurements
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Summary:We present a method for accurately de-embedding the electrical effects of the bias and measurement electrode structure used for spin-torque oscillator (STO) measurements. We propose a simple, but very accurate, method that requires only one additional test structure per STO wafer. We show that the effects of the electrode structure, including phase shift over frequency and insertion loss, can be removed, providing an accurate measurement of the true STO parameters. Our method is verified using 24 STOs across four different wafers each containing 140 STOs.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2017.2752004