Structure‐related current transport and photoluminescence in SiOxNy and SiNx based superlattices with Si nanocrystals

A comparative study of structural properties, photoluminescence and electrical conductivity of SiOxNy/SiO2, SiOxNy/Si3N4 and SiNx/Si3N4 superlattices is presented. The samples were prepared by plasma enhanced chemical vapor deposition and annealed at 1150 °C in order to produce arrays of silicon nan...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2017-10, Vol.214 (10), p.n/a
Main Authors: Zhigunov, Denis M., Martyshov, Mikhail N., Forsh, Pavel A., Kamenskikh, Irina A., Yakunin, Sergey N., Kashkarov, Pavel K.
Format: Article
Language:English
Subjects:
Annealing
Chemical vapor deposition
Electrical resistivity
electronic conduction
Maxima
Nanocrystals
Photoluminescence
Plasma enhanced chemical vapor deposition
silicon
Silicon dioxide
Silicon nitride
Spectrum analysis
Superlattices
X‐ray diffraction
X‐ray reflectivity
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Summary:A comparative study of structural properties, photoluminescence and electrical conductivity of SiOxNy/SiO2, SiOxNy/Si3N4 and SiNx/Si3N4 superlattices is presented. The samples were prepared by plasma enhanced chemical vapor deposition and annealed at 1150 °C in order to produce arrays of silicon nanocrystals, with their formation being confirmed by X‐ray diffraction analysis and photoluminescence spectroscopy. Reference samples without silicon nanocrystals were also fabricated by annealing of as‐prepared films at a lower temperature (700 °C). All high temperature ‐annealed samples are characterized by similar photoluminescence spectra with the maxima in the range from 1.3 to 1.6 eV, which were attributed to Si nanocrystals. The peak position, as well as photoluminescence lifetime in the microsecond range, point to the quantum confined origin of the emission. Current‐voltage measurements revealed an increase in conductivity by several orders of magnitude for the samples with Si nanocrystals in SiNx/Si3N4 superlattices as compared to both SiOxNy/Si3N4 and SiOxNy/SiO2 films, as well as to low temperature annealed counterparts. The dependence of the conduction mechanism in superlattices on their structural properties is discussed.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700040