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Focused ion beam implantation for the nucleation of self-catalyzed III-V nanowires
Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further optimize the growth, the substrate after implantation was analyzed via atomic force microscopy, which indi...
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| Published in: | Microelectronic engineering 2017-06, Vol.177, p.93-97 |
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| Main Authors: | , , , , , , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c368t-288feddb28d3092225d4070ddfbac922d85f10b185acff8a4fb1ec8a674782e43 |
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| cites | cdi_FETCH-LOGICAL-c368t-288feddb28d3092225d4070ddfbac922d85f10b185acff8a4fb1ec8a674782e43 |
| container_end_page | 97 |
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| container_start_page | 93 |
| container_title | Microelectronic engineering |
| container_volume | 177 |
| creator | Lancaster, Suzanne Kriz, Martin Schinnerl, Markus MacFarland, Donald Zederbauer, Tobias Andrews, Aaron Maxwell Schrenk, Werner Strasser, Gottfried Detz, Hermann |
| description | Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further optimize the growth, the substrate after implantation was analyzed via atomic force microscopy, which indicated that sputtering depth had a strong influence on the subsequent nanowire growth. Lower beam voltage accelerations led to beam defocusing and thereafter better growth, while focused, high-acceleration beams led to a larger sputtering depth, worse growth and more tilted nanowire growth. The optical quality of the nanowires was evaluated using spatially resolved photoluminesence measurements at room temperature.
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| doi_str_mv | 10.1016/j.mee.2017.03.003 |
| format | article |
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[Display omitted]</description><subject>AFM</subject><subject>Atomic force microscopy</subject><subject>Confocal microscopy</subject><subject>Defocusing</subject><subject>Epitaxial growth</subject><subject>FIB lithography</subject><subject>Ion beams</subject><subject>Ion implantation</subject><subject>Luminescence</subject><subject>MBE</subject><subject>Microscopy</subject><subject>Molecular beam epitaxy</subject><subject>Nanowire arrays</subject><subject>Nanowires</subject><subject>Nucleation</subject><subject>Offset printing</subject><subject>Photoluminescence</subject><subject>Silicon substrates</subject><subject>Sputtering</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLxDAUhYMoOI7-AHcF16159HEHVzI4WhgQRN2GNLnBlrYZk1YZf70ZxrWry7mc7z4OIdeMZoyy8rbLBsSMU1ZlVGSUihOyYFCJtChKOCWL6KnSlWDVObkIoaNR5xQW5GXj9BzQJK0bkwbVkLTDrlfjpKZDxzqfTB-YjLPu8dhyNgnY21SrSfX7n4jWdZ2-J6Ma3XfrMVySM6v6gFd_dUneNg-v66d0-_xYr--3qRYlTCkHsGhMw8EIuuKcFyanFTXGNkpHbaCwjDYMCqWtBZXbhqEGVVZ5BRxzsSQ3x7k77z5nDJPs3OzHuFKyVc4ZADAWXezo0t6F4NHKnW8H5feSUXmITnYyRicP0UkqZIwuMndHBuP5Xy16GXSLo0YT_9OTNK79h_4FNvF2sw</recordid><startdate>20170605</startdate><enddate>20170605</enddate><creator>Lancaster, Suzanne</creator><creator>Kriz, Martin</creator><creator>Schinnerl, Markus</creator><creator>MacFarland, Donald</creator><creator>Zederbauer, Tobias</creator><creator>Andrews, Aaron Maxwell</creator><creator>Schrenk, Werner</creator><creator>Strasser, Gottfried</creator><creator>Detz, Hermann</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>6I.</scope><scope>AAFTH</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20170605</creationdate><title>Focused ion beam implantation for the nucleation of self-catalyzed III-V nanowires</title><author>Lancaster, Suzanne ; Kriz, Martin ; Schinnerl, Markus ; MacFarland, Donald ; Zederbauer, Tobias ; Andrews, Aaron Maxwell ; Schrenk, Werner ; Strasser, Gottfried ; Detz, Hermann</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-288feddb28d3092225d4070ddfbac922d85f10b185acff8a4fb1ec8a674782e43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>AFM</topic><topic>Atomic force microscopy</topic><topic>Confocal microscopy</topic><topic>Defocusing</topic><topic>Epitaxial growth</topic><topic>FIB lithography</topic><topic>Ion beams</topic><topic>Ion implantation</topic><topic>Luminescence</topic><topic>MBE</topic><topic>Microscopy</topic><topic>Molecular beam epitaxy</topic><topic>Nanowire arrays</topic><topic>Nanowires</topic><topic>Nucleation</topic><topic>Offset printing</topic><topic>Photoluminescence</topic><topic>Silicon substrates</topic><topic>Sputtering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lancaster, Suzanne</creatorcontrib><creatorcontrib>Kriz, Martin</creatorcontrib><creatorcontrib>Schinnerl, Markus</creatorcontrib><creatorcontrib>MacFarland, Donald</creatorcontrib><creatorcontrib>Zederbauer, Tobias</creatorcontrib><creatorcontrib>Andrews, Aaron Maxwell</creatorcontrib><creatorcontrib>Schrenk, Werner</creatorcontrib><creatorcontrib>Strasser, Gottfried</creatorcontrib><creatorcontrib>Detz, Hermann</creatorcontrib><collection>ScienceDirect Open Access Titles</collection><collection>Elsevier:ScienceDirect:Open Access</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lancaster, Suzanne</au><au>Kriz, Martin</au><au>Schinnerl, Markus</au><au>MacFarland, Donald</au><au>Zederbauer, Tobias</au><au>Andrews, Aaron Maxwell</au><au>Schrenk, Werner</au><au>Strasser, Gottfried</au><au>Detz, Hermann</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Focused ion beam implantation for the nucleation of self-catalyzed III-V nanowires</atitle><jtitle>Microelectronic engineering</jtitle><date>2017-06-05</date><risdate>2017</risdate><volume>177</volume><spage>93</spage><epage>97</epage><pages>93-97</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further optimize the growth, the substrate after implantation was analyzed via atomic force microscopy, which indicated that sputtering depth had a strong influence on the subsequent nanowire growth. Lower beam voltage accelerations led to beam defocusing and thereafter better growth, while focused, high-acceleration beams led to a larger sputtering depth, worse growth and more tilted nanowire growth. The optical quality of the nanowires was evaluated using spatially resolved photoluminesence measurements at room temperature.
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| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2017-06, Vol.177, p.93-97 |
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| language | eng |
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| source | ScienceDirect Journals |
| subjects | AFM Atomic force microscopy Confocal microscopy Defocusing Epitaxial growth FIB lithography Ion beams Ion implantation Luminescence MBE Microscopy Molecular beam epitaxy Nanowire arrays Nanowires Nucleation Offset printing Photoluminescence Silicon substrates Sputtering |
| title | Focused ion beam implantation for the nucleation of self-catalyzed III-V nanowires |
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