Focused ion beam implantation for the nucleation of self-catalyzed III-V nanowires

Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further optimize the growth, the substrate after implantation was analyzed via atomic force microscopy, which indi...

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Bibliographic Details
Published in:Microelectronic engineering 2017-06, Vol.177, p.93-97
Main Authors: Lancaster, Suzanne, Kriz, Martin, Schinnerl, Markus, MacFarland, Donald, Zederbauer, Tobias, Andrews, Aaron Maxwell, Schrenk, Werner, Strasser, Gottfried, Detz, Hermann
Format: Article
Language:English
Subjects:
AFM
Atomic force microscopy
Confocal microscopy
Defocusing
Epitaxial growth
FIB lithography
Ion beams
Ion implantation
Luminescence
MBE
Microscopy
Molecular beam epitaxy
Nanowire arrays
Nanowires
Nucleation
Offset printing
Photoluminescence
Silicon substrates
Sputtering
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Summary:Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further optimize the growth, the substrate after implantation was analyzed via atomic force microscopy, which indicated that sputtering depth had a strong influence on the subsequent nanowire growth. Lower beam voltage accelerations led to beam defocusing and thereafter better growth, while focused, high-acceleration beams led to a larger sputtering depth, worse growth and more tilted nanowire growth. The optical quality of the nanowires was evaluated using spatially resolved photoluminesence measurements at room temperature. [Display omitted]
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2017.03.003