Nitride heterostructure optimization by simulation

In current paper nanoheterostructure optimization for LED and phototransistor usage is discussed. Special doping into quantum wells and barriers by Indium atoms was investigated. By simulation improved quantum sized active region was detected which increases quantum efficiency and sensitivity upto 1...

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Bibliographic Details
Published in:Journal of crystal growth 2017-06, Vol.468, p.567-571
Main Authors: Rabinovich, O.I., Legotin, S.A., Didenko, S.I.
Format: Article
Language:English
Subjects:
A1. Computer simulation
B1. Nitrides
B2. Semiconducting materials
B3. Light emitting diodes
Gallium nitrides
Indium
Indium gallium nitrides
Light emitting diodes
Luminescence
Optimization
Photoluminescence
Quantum efficiency
Quantum wells
Simulation
Spectral sensitivity
Citations: Items that this one cites
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Summary:In current paper nanoheterostructure optimization for LED and phototransistor usage is discussed. Special doping into quantum wells and barriers by Indium atoms was investigated. By simulation improved quantum sized active region was detected which increases quantum efficiency and sensitivity upto 10%. Photoluminescence spectral curve and Peak lambda of the InGaN/GaN nanoheterostructure with different Indium concentration across wafer were investigated. •Nanoheterostructure optimization for LED and photodetector usage is discussed.•Special doping into quantum wells and barriers by Indium atoms was investigated.•QW barriers doped by Indium(7%) and impurity (1018cm−3) increase QE and sensitivity.•It was detected that by doping I-V curves could be shifted to a lower-voltage area.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2016.11.067