Pressure effect on magnetic susceptibility of SmS in the “black” phase

New experimental results on the pressure dependence of magnetic susceptibility χ of SmS in semiconducting phase are obtained with precise measurements of χ as a function of the hydrostatic pressure P up to 2 kbar at liquid nitrogen and room temperatures. A pronounced magnitude of the pressure effect...

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Bibliographic Details
Published in:Journal of alloys and compounds 2017-02, Vol.695, p.1647-1652
Main Authors: Panfilov, A.S., Grechnev, G.E., Chareev, D.A., Polkovnikov, A.A., Andreev, O.V.
Format: Article
Language:English
Subjects:
10th century
Effects
Electron states
Electronic structure
Hydrostatic pressure
Intermediate valence state
Liquid nitrogen
Magnetic permeability
Magnetism
Pressure
Pressure dependence
Pressure effect
Samarium monochalcogenides
Temperature
Van Vleck paramagnetism
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Summary:New experimental results on the pressure dependence of magnetic susceptibility χ of SmS in semiconducting phase are obtained with precise measurements of χ as a function of the hydrostatic pressure P up to 2 kbar at liquid nitrogen and room temperatures. A pronounced magnitude of the pressure effect is found to be positive in sign and strongly temperature dependent: the pressure derivatives of χ, d lnχ/dP, are 6.3 ± 0.5 and 14.2 ± 1 Mbar−1 at 300 and 78 K, respectively. The experimental results are supplemented by theoretical calculations of the volume dependent electronic structure of SmS and orbital magnetism of the band electronic states χVV(band). It was found that χVV(band) value appeared to be strongly dependent on pressure, determining the main mechanism of the observed puzzling pressure effects in semiconducting SmS compound. •Measurements of pressure effect on magnetic susceptibility of semiconducting SmS.•Strong positive pressure effect correlates with behavior of the energy gap of SmS.•Excess susceptibility originates from orbital magnetism of band electronic states.•The model is verified by calculations of magnetic response of band electronic states.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2016.10.311