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Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure
The possibility of obtaining a stoichiometric Bi 2 Se 3 film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi 2 Se 3 film can be only produced at a certain ratio of the Se and Bi film thicknesses ( d Se / d Bi = 3.13). X...
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| Published in: | Technical physics letters 2017-08, Vol.43 (8), p.701-704 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c316t-9a228d7cf91b8fdd592583431424a1d3cd97ef7c66c7fdfe509b9760e3e9323a3 |
| container_end_page | 704 |
| container_issue | 8 |
| container_start_page | 701 |
| container_title | Technical physics letters |
| container_volume | 43 |
| creator | Kogai, V. Ya Mikheev, K. G. Mikheev, G. M. |
| description | The possibility of obtaining a stoichiometric Bi
2
Se
3
film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi
2
Se
3
film can be only produced at a certain ratio of the Se and Bi film thicknesses (
d
Se
/
d
Bi
= 3.13). X-ray-diffraction analysis and Raman spectroscopy were used to study the phase transformations in a Se(141 nm)/Bi(45 nm) heterostructure upon its thermal treatment in a vacuum. The phase transition temperatures at which various crystalline phases are formed were determined. It is shown that Bi
2
Se
3
crystallizes in the Se(141 nm)/Bi(45 nm) heterostructure heated to 493 K in conformity with an exponential law, with a characteristic time in which the equilibrium state is attained equal to 20 min. |
| doi_str_mv | 10.1134/S1063785017080107 |
| format | article |
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2
Se
3
film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi
2
Se
3
film can be only produced at a certain ratio of the Se and Bi film thicknesses (
d
Se
/
d
Bi
= 3.13). X-ray-diffraction analysis and Raman spectroscopy were used to study the phase transformations in a Se(141 nm)/Bi(45 nm) heterostructure upon its thermal treatment in a vacuum. The phase transition temperatures at which various crystalline phases are formed were determined. It is shown that Bi
2
Se
3
crystallizes in the Se(141 nm)/Bi(45 nm) heterostructure heated to 493 K in conformity with an exponential law, with a characteristic time in which the equilibrium state is attained equal to 20 min.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785017080107</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Classical and Continuum Physics ; Heat treatment ; Phase transitions ; Physics ; Physics and Astronomy ; Raman spectroscopy</subject><ispartof>Technical physics letters, 2017-08, Vol.43 (8), p.701-704</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-9a228d7cf91b8fdd592583431424a1d3cd97ef7c66c7fdfe509b9760e3e9323a3</citedby><cites>FETCH-LOGICAL-c316t-9a228d7cf91b8fdd592583431424a1d3cd97ef7c66c7fdfe509b9760e3e9323a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Kogai, V. Ya</creatorcontrib><creatorcontrib>Mikheev, K. G.</creatorcontrib><creatorcontrib>Mikheev, G. M.</creatorcontrib><title>Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>The possibility of obtaining a stoichiometric Bi
2
Se
3
film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi
2
Se
3
film can be only produced at a certain ratio of the Se and Bi film thicknesses (
d
Se
/
d
Bi
= 3.13). X-ray-diffraction analysis and Raman spectroscopy were used to study the phase transformations in a Se(141 nm)/Bi(45 nm) heterostructure upon its thermal treatment in a vacuum. The phase transition temperatures at which various crystalline phases are formed were determined. It is shown that Bi
2
Se
3
crystallizes in the Se(141 nm)/Bi(45 nm) heterostructure heated to 493 K in conformity with an exponential law, with a characteristic time in which the equilibrium state is attained equal to 20 min.</description><subject>Classical and Continuum Physics</subject><subject>Heat treatment</subject><subject>Phase transitions</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Raman spectroscopy</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kM1LAzEQxYMoWD_-AG8Bz2uTzO5mc7T1EwoeqkdZ0uzEpnQ3NckK_e_dpR4E8TQD835vHo-QK85uOId8uuSsBFkVjEtWMc7kEZlwplhWFgDH415CNt5PyVmMG8ZYJQo1Ie93uPPRJec76i2NyTuzdr7FFJyhMyeWCNS6bUtXe_qlTd-3WVpjaPWWpoA6tdilkVzidOboGhMGH1PoTeoDXpATq7cRL3_mOXl7uH-dP2WLl8fn-e0iM8DLlCktRNVIYxVfVbZpCiWKCnLgucg1b8A0SqKVpiyNtI3FgqmVkiVDQAUCNJyT64PvLvjPHmOqN74P3fCy5gryQoGq8kHFDyozRIwBbb0LrtVhX3NWjy3Wf1ocGHFg4qDtPjD8cv4X-gadL3P_</recordid><startdate>20170801</startdate><enddate>20170801</enddate><creator>Kogai, V. Ya</creator><creator>Mikheev, K. G.</creator><creator>Mikheev, G. M.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170801</creationdate><title>Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure</title><author>Kogai, V. Ya ; Mikheev, K. G. ; Mikheev, G. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-9a228d7cf91b8fdd592583431424a1d3cd97ef7c66c7fdfe509b9760e3e9323a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Classical and Continuum Physics</topic><topic>Heat treatment</topic><topic>Phase transitions</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Raman spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kogai, V. Ya</creatorcontrib><creatorcontrib>Mikheev, K. G.</creatorcontrib><creatorcontrib>Mikheev, G. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kogai, V. Ya</au><au>Mikheev, K. G.</au><au>Mikheev, G. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2017-08-01</date><risdate>2017</risdate><volume>43</volume><issue>8</issue><spage>701</spage><epage>704</epage><pages>701-704</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>The possibility of obtaining a stoichiometric Bi
2
Se
3
film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi
2
Se
3
film can be only produced at a certain ratio of the Se and Bi film thicknesses (
d
Se
/
d
Bi
= 3.13). X-ray-diffraction analysis and Raman spectroscopy were used to study the phase transformations in a Se(141 nm)/Bi(45 nm) heterostructure upon its thermal treatment in a vacuum. The phase transition temperatures at which various crystalline phases are formed were determined. It is shown that Bi
2
Se
3
crystallizes in the Se(141 nm)/Bi(45 nm) heterostructure heated to 493 K in conformity with an exponential law, with a characteristic time in which the equilibrium state is attained equal to 20 min.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785017080107</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7850 |
| ispartof | Technical physics letters, 2017-08, Vol.43 (8), p.701-704 |
| issn | 1063-7850 1090-6533 |
| language | eng |
| recordid | cdi_proquest_journals_1934593984 |
| source | Springer Link |
| subjects | Classical and Continuum Physics Heat treatment Phase transitions Physics Physics and Astronomy Raman spectroscopy |
| title | Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure |
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