Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure

The possibility of obtaining a stoichiometric Bi 2 Se 3 film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi 2 Se 3 film can be only produced at a certain ratio of the Se and Bi film thicknesses ( d Se / d Bi = 3.13). X...

Full description

Saved in:
Bibliographic Details
Published in:Technical physics letters 2017-08, Vol.43 (8), p.701-704
Main Authors: Kogai, V. Ya, Mikheev, K. G., Mikheev, G. M.
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Heat treatment
Phase transitions
Physics
Physics and Astronomy
Raman spectroscopy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The possibility of obtaining a stoichiometric Bi 2 Se 3 film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi 2 Se 3 film can be only produced at a certain ratio of the Se and Bi film thicknesses ( d Se / d Bi = 3.13). X-ray-diffraction analysis and Raman spectroscopy were used to study the phase transformations in a Se(141 nm)/Bi(45 nm) heterostructure upon its thermal treatment in a vacuum. The phase transition temperatures at which various crystalline phases are formed were determined. It is shown that Bi 2 Se 3 crystallizes in the Se(141 nm)/Bi(45 nm) heterostructure heated to 493 K in conformity with an exponential law, with a characteristic time in which the equilibrium state is attained equal to 20 min.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785017080107