Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

A Ti/Orange G/ p -InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/ p -InP metal/semiconductor (MS) and Ti/OG/ p -InP MIS junctions have been analyzed based on...

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Bibliographic Details
Published in:Journal of electronic materials 2017-10, Vol.46 (10), p.5746-5754
Main Authors: Sreenu, K., Venkata Prasad, C., Rajagopal Reddy, V.
Format: Article
Language:English
Subjects:
Bias
Characterization and Evaluation of Materials
Chemistry and Materials Science
Current voltage characteristics
Electric potential
Electrical junctions
Electrical properties
Electron spin
Electronic devices
Electronics
Electronics and Microelectronics
Emission
Evaporation
Instrumentation
Interlayers
Materials Science
Optical and Electronic Materials
Parameter modification
Resistance factors
Shunt resistance
Solid State Physics
Spin coating
Titanium
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Description
Summary:A Ti/Orange G/ p -InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/ p -InP metal/semiconductor (MS) and Ti/OG/ p -InP MIS junctions have been analyzed based on current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics. The MIS junction exhibited higher rectifying behavior than the MS junction. The higher barrier height (BH) of the MIS junction compared with the MS junction indicates effective modification by the OG layer. Also, the BH, ideality factor, shunt resistance, and series resistance were extracted based on the I – V characteristic, Cheung’s and Norde’s methods, and the Ψ S – V plot. The BH evaluated by Cheung’s and Norde’s methods and the Ψ S – V plot was shown to be similar, confirming the reliability and validity of the methods applied. The extracted interface state density ( N SS ) of the MIS junction was less than for the MS junction, revealing that the OG organic layer reduced the N SS value. Analysis demonstrated that, in the lower bias region, the reverse current conduction mechanism was dominated by Poole–Frenkel emission for both the MS and MIS junction. Meanwhile, in the higher bias region, Schottky emission governed the reverse current conduction mechanism. The results suggest that such OG layers have potential for use in high-quality electronic devices.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-017-5611-9