Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe

Due to its low diffusivity and high activation rate, arsenic has become the dopant of choice in p/n HgCdTe high operating temperature technology. Its diffusion mechanism, however, remains imprecise. In this work, arsenic diffusion was studied in molecular beam epitaxy HgCdTe structures consisting of...

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Bibliographic Details
Published in:Journal of electronic materials 2017-09, Vol.46 (9), p.5394-5399
Main Authors: Grenouilloux, T., Ferron, A., Péré-Laperne, N., Mathiot, D.
Format: Article
Language:English
Subjects:
Arsenic
Atomic properties
Cadmium zinc tellurides
Characterization and Evaluation of Materials
Chemistry and Materials Science
Diffusion annealing
Diffusion coefficient
Diffusion effects
Diffusion layers
Diffusivity
Electronics
Electronics and Microelectronics
Epitaxial growth
Instrumentation
Materials Science
Molecular beam epitaxy
Operating temperature
Optical and Electronic Materials
Secondary ion mass spectroscopy
Solid State Physics
Vacancies
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Summary:Due to its low diffusivity and high activation rate, arsenic has become the dopant of choice in p/n HgCdTe high operating temperature technology. Its diffusion mechanism, however, remains imprecise. In this work, arsenic diffusion was studied in molecular beam epitaxy HgCdTe structures consisting of alternatively As-doped and intrinsic layers grown on a CdZnTe substrate. The diffusion coefficient of As was extracted from secondary ion mass spectroscopy concentration profiles. Annealings were performed for different temperatures, mercury partial pressures ( P Hg ), annealing times and cadmium atomic fractions. Fermi-level effect on diffusion was observed, indicating extrinsic conditions for diffusion at high As concentration. Based on the variation of As diffusivity with P Hg and As concentration, we propose that As diffusion occurs on both II and VI sublattices. Our results are consistent with the fact that As VI diffusion is assisted by the Te interstitial, introducing donor levels in the bandgap, while As II diffusion is assisted by the cation vacancy.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-017-5637-z