MBE-grown InSb photodetector arrays

The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arra...

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Bibliographic Details
Published in:Technical physics 2017-06, Vol.62 (6), p.915-919
Main Authors: Bakarov, A. K., Gutakovskii, A. K., Zhuravlev, K. S., Kovchavtsev, A. P., Toropov, A. I., Burlakov, I. D., Boltar’, K. O., Vlasov, P. V., Lopukhin, A. A.
Format: Article
Language:English
Subjects:
Arrays
Classical and Continuum Physics
Epitaxy
Indium antimonide
Intermetallic compounds
Physics
Physics and Astronomy
Single crystals
Solid State Electronics
Substrates
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Summary:The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784217060044