42‐1: Development of Cu BCE‐Structure IGZO TFT for a High‐ppi 31‐in. 8K × 4K GOA LCD

The electrical characteristics of the BCE‐structure IGZO TFTs were studied. Through modifying the passivation layer and optimizing the selection of copper acid and PFA material, the TFTs exhibited good threshold voltage and reliability. Finally, a high performance 31‐inch 8K4K GOA LCD was demonstrat...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.592-595
Main Authors: Ge, Shi-Min, Li, Shan, Chen, Shu-Jhih, Kong, Xiang-Yong, Meng, Yan-Hong, Shi, Wen, Shi, Long-Qiang, Wu, Wei, Liu, X, Gan, Qi-Ming, Zhao, Yang, Zhang, CK, Chiu, Chung-Yi, Lee, Chia-Yu
Format: Article
Language:English
Subjects:
8K4K
a-IGZO TFT
BCE
Copper
GOA
Passivity
Thin film transistors
Threshold voltage
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Summary:The electrical characteristics of the BCE‐structure IGZO TFTs were studied. Through modifying the passivation layer and optimizing the selection of copper acid and PFA material, the TFTs exhibited good threshold voltage and reliability. Finally, a high performance 31‐inch 8K4K GOA LCD was demonstrated.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11705