14‐1: Large‐Area Processing of Solution Type Metal‐Oxide in TFT Backplanes and Integration in Highly Stable OLED Displays

Solution type metal‐oxide semiconductor was processed on mass‐production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.169-172
Main Authors: Marinkovic, Marko, Takata, Ryo, Neumann, Anita, Pham, Duy Vu, Anselmann, Ralf, Maas, Joris, van der Steen, Jan-Laurens, Gelinck, Gerwin, Katsouras, Ilias
Format: Article
Language:English
Subjects:
Active matrix displays
Active-Matrix OLED Displays
Backplanes
Diodes
Glass substrates
Large-Area Processing
Metal oxides
Organic light emitting diodes
Reliability
Soluble Metal-Oxide Semiconductor
Stresses
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Summary:Solution type metal‐oxide semiconductor was processed on mass‐production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous TFT performance and bias stress reliability. An 85‐ppi QVGA AMOLED display is demonstrated.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.11612