Influence of the yttria dopant on the structure and properties of (ZrO2)0.91–x(Sc2O3)0.09(Y2O3)х (x = 0–0.02) crystals

We have studied the influence of the yttrium oxide (Y 2 O 3 ) dopant (1 and 2 mol %) on the phase composition, structure, and electrical properties of ZrO 2 –9 mol % Sc 2 O 3 solid solution. Stabilization of ZrO 2 jointly with 9 mol % Sc 2 O 3 and 2 mol % Y 2 O 3 is shown to allow the acquisition of...

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Bibliographic Details
Published in:Russian microelectronics 2016-12, Vol.45 (8-9), p.625-632
Main Authors: Agarkov, D. A., Borik, M. A., Bredikhin, S. I., Bublik, V. T., Iskhakova, L. D., Kulebyakin, A. V., Kuritsyna, I. E., Lomonova, E. E., Milovich, F. O., Myzina, V. A., Seryakov, S. V., Tabachkova, N. Yu
Format: Article
Language:English
Subjects:
Electrical Engineering
Engineering
Indenters
Microhardness
Scandium oxides
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Summary:We have studied the influence of the yttrium oxide (Y 2 O 3 ) dopant (1 and 2 mol %) on the phase composition, structure, and electrical properties of ZrO 2 –9 mol % Sc 2 O 3 solid solution. Stabilization of ZrO 2 jointly with 9 mol % Sc 2 O 3 and 2 mol % Y 2 O 3 is shown to allow the acquisition of high phase stability transparent homogeneous crystals with a cubic structure. Their mechanical grinding is established to cause no change in the phase composition of these crystals, whereas the powders retain the initial fluorine structure. The powders preserved the original structure of the fluorite crystals. All the probed crystals reveal high microhardness and low fracture toughness. Increasing the Y 2 O 3 concentration in the crystals led to a reduction of the maximum loads on the indenter, which the sample withstood without cracking. As is shown, the specific conductivity exhibits nonmonotonic behavior depending on the Y 2 O 3 concentration in the crystals. Increasing the Y 2 O 3 content to 2 mol % in the solid electrolyte reduces the conductivity of the crystals in the entire temperature range that is attributed to a decrease in the carrier mobility due to the increasing ion radius of the stabilizing ion.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739716080023