Lead-Free, Blue Emitting Bismuth Halide Perovskite Quantum Dots

Lead halide perovskite quantum dots (QDs) are promising candidates for future lighting applications, due to their high quantum yield, narrow full width at half maximum (FWHM), and wide color gamut. However, the toxicity of lead represents a potential obstacle to their utilization. Although tin(II) h...

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Bibliographic Details
Published in:Angewandte Chemie (International ed.) 2016-11, Vol.55 (48), p.15012-15016
Main Authors: Leng, Meiying, Chen, Zhengwu, Yang, Ying, Li, Zha, Zeng, Kai, Li, Kanghua, Niu, Guangda, He, Yisu, Zhou, Qingchao, Tang, Jiang
Format: Article
Language:English
Subjects:
bismuth
MA3Bi2Br9
Nanocrystals
perovskites
photoluminescence
Quantum dots
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Summary:Lead halide perovskite quantum dots (QDs) are promising candidates for future lighting applications, due to their high quantum yield, narrow full width at half maximum (FWHM), and wide color gamut. However, the toxicity of lead represents a potential obstacle to their utilization. Although tin(II) has been used to replace lead in films and QDs, the high intrinsic defect density and oxidation vulnerability typically leads to unsatisfactory material properties. Bismuth, with much lower toxicity than lead, is promising to constitute lead‐free perovskite materials because Bi3+ is isoelectronic to Pb2+ and more stable than Sn2+. Herein we report, for the first time, the synthesis and optical characterization of MA3Bi2Br9 perovskite QDs with photoluminescence quantum yield (PLQY) up to 12 %, which is much higher than Sn‐based perovskite nanocrystals. Furthermore, the photoluminescence (PL) peaks of MA3Bi2X9 QDs could be easily tuned from 360 to 540 nm through anion exchange. Better than Sn or Pb: The synthesis and optical characterization of bismuth‐based MA3Bi2Br9 perovskite quantum dots with a photoluminescence quantum yield of up to 12 % is described. Further, the photoluminescence peaks of MA3Bi2X9 QDs (X=Cl, Br, I) could be easily tuned from 360 to 540 nm through anion exchange.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201608160