Performance of NUV-HD Silicon Photomultiplier Technology

In this paper, we present the full characterization of a new high-density (HD) cell silicon photomultiplier (SiPM) technology for ultraviolet (UV) and blue light detection, named near UV HD SiPM. Thanks to an optimized border region around each cell, we were able to develop devices having a very hig...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-03, Vol.63 (3), p.1111-1116
Main Authors: Piemonte, Claudio, Acerbi, Fabio, Ferri, Alessandro, Gola, Alberto, Paternoster, Giovanni, Regazzoni, Veronica, Zappala, Gaetano, Zorzi, Nicola
Format: Article
Language:English
Subjects:
Borders
Correlation
Detectors
Devices
Dynamic range
Energy resolution
Excess noise factor (ENF)
High definition video
Multiplier phototubes
Photomultipliers
positron emission tomography
Silicon
silicon photomultipliers (SiPMs)
Tomography
Voltage control
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Summary:In this paper, we present the full characterization of a new high-density (HD) cell silicon photomultiplier (SiPM) technology for ultraviolet (UV) and blue light detection, named near UV HD SiPM. Thanks to an optimized border region around each cell, we were able to develop devices having a very high detection efficiency and, at the same time, a high dynamic range. We produced SiPMs with a square cell pitch of 15, 20, 25, and 30 μm featuring a peak efficiency in the violet region ranging from 40% to 55%, according to the cell size. We tested this technology for time-of-flight positron emission tomography. Using two 4 × 4 mm 2 SiPMs with a 25 × 25 μm 2 cell pitch coupled to 3 × 3 × 5 mm 3 LYSO scintillators, we reached for the first time 100-ps full-width at half-maximum coincidence time resolution. This result was independent of the temperature in a range from 20 °C to -20 °C. At the same time, thanks to the high dynamic range and low correlated noise, we obtained an energy resolution lower than 9% for 511-keV γ-rays.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2516641