Germanium gate junction-field-effect phototransistor integrated on SOI platform

We report on the fabrication and characterization of a near infrared junction field effect phototransistor provided with a Germanium gate and fabricated in a silicon photonics foundry. The maximum device responsivity exceeds 36A/W with a dark current of 33μA at 2V.

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Bibliographic Details
Main Authors: Sorianello, V, De Angelis, G, De Iacovo, A, Colace, L, Faralli, S, Romagnoli, M
Format: Conference Proceeding
Language:English
Subjects:
Integrated optoelectronics
Other field effect devices
Photoelectric devices
Online Access:Get full text
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Description
Summary:We report on the fabrication and characterization of a near infrared junction field effect phototransistor provided with a Germanium gate and fabricated in a silicon photonics foundry. The maximum device responsivity exceeds 36A/W with a dark current of 33μA at 2V.
DOI:10.1049/cp.2015.0127