In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy

p -Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpr...

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Bibliographic Details
Published in:Journal of electronic materials 2015-09, Vol.44 (9), p.3202-3206
Main Authors: Farrell, S., Barnes, T., Metzger, W. K., Park, J. H., Kodama, R., Sivananthan, S.
Format: Article
Language:English
Subjects:
Cadmium telluride
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Instrumentation
Materials Science
Molecular beam epitaxy
Optical and Electronic Materials
Photovoltaic cells
Solid State Physics
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Summary:p -Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of 1 × 10 17 cm - 3 . An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p -type layers with net carrier concentration of ∼5 × 10 16  cm −3 .
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-015-3913-3