An Integrated LVDS Transmitter in 0.18-[Formula Omitted]m CMOS Technology With High Immunity to EMI

This paper presents an on-chip design topology that compensates the effects of electromagnetic interference (EMI) in a low-voltage differential signaling (LVDS) transmitter. The proposed structure enables the transmitter to maintain a wide differential opening by achieving a superior common-mode lev...

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Bibliographic Details
Published in:IEEE transactions on electromagnetic compatibility 2015-02, Vol.57 (1), p.128
Main Authors: Matig-a, Gilbert Andrew, Yuce, Mehmet Rasit, Redoute, Jean-Michel
Format: Article
Language:English
Subjects:
Electric noise
Semiconductors
Transmitters
Online Access:Get full text
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Summary:This paper presents an on-chip design topology that compensates the effects of electromagnetic interference (EMI) in a low-voltage differential signaling (LVDS) transmitter. The proposed structure enables the transmitter to maintain a wide differential opening by achieving a superior common-mode level independent driving current and common-mode feedback closed-loop gain. Direct power injection measurements illustrate that the proposed LVDS transmitter structure demonstrates a superior EMI immunity as it maintains an eye opening of at least 100 mVp-p in presence of a conductive EMI injection ranging from 150 to 2 GHz with an amplitude of up to 9 Vp-p. Additionally, transverse electromagnetic cell measurements validate the radiated immunity of the proposed integrated LVDS transmitter in presence of an EMI injection of 30 dBm (150 kHz-2 GHz). This EMI robust LVDS transmitter was designed using the UMC 0.18- [Formula Omitted]m CMOS process.
ISSN:0018-9375
1558-187X
DOI:10.1109/TEMC.2014.2359032