Ion implantation and diffusion of zinc in dense SnO2 ceramics

We studied the diffusion of Zn in dense SnO2 ceramics by using secondary ion mass spectrometry (SIMS). Dense SnO2 ceramics with additives of 6 mol.% MgO and 0.2 mol.% Sb2O5 were synthesized, and Zn was implanted in the SnO2 ceramics by ion implantation technique. The implanted samples were annealed...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Ceramic Society of Japan 2013/12/01, Vol.121(1420), pp.1004-1007
Main Authors: HASHIGUCHI, Minako, SAKAGUCHI, Isao, SAKAMOTO, Naoya, YURIMOTO, Hisayoshi, HISHITA, Shunichi, OHASHI, Naoki
Format: Article
Language:English
Subjects:
Diffusion
Point defects
Secondary ion mass spectrometry
Tin dioxide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We studied the diffusion of Zn in dense SnO2 ceramics by using secondary ion mass spectrometry (SIMS). Dense SnO2 ceramics with additives of 6 mol.% MgO and 0.2 mol.% Sb2O5 were synthesized, and Zn was implanted in the SnO2 ceramics by ion implantation technique. The implanted samples were annealed at 850–1200°C, and the concentration profiles of Zn were evaluated by SIMS. The temperature dependence of Zn diffusion at 850–950°C could be expressed as DZn[cm2/s] = 3.3 × 106 exp(−463.5[kJ/mol]/RT). These results in relation to the fabrication process of SnO2 with added ZnO was then discussed.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.121.1004