Rapid dislocation-density mapping of as-cut crystalline silicon wafers

Rapid quantification of structural defects, especially dislocations, is desired for characterization of semiconductor materials. Herein, we outline and validate a low‐cost approach for dislocation‐density quantification in silicon, involving a high‐resolution commercial dark‐field imaging device, a...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2013-12, Vol.7 (12), p.1041-1044
Main Authors: Needleman, David Berney, Choi1, Hyunjoo, Powell1, Douglas M., Buonassisi, Tonio
Format: Article
Language:English
Subjects:
Crystallization
Density
dislocations
etch pits
optical microscopy
photovoltaics
silicon
Silicon wafers
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Summary:Rapid quantification of structural defects, especially dislocations, is desired for characterization of semiconductor materials. Herein, we outline and validate a low‐cost approach for dislocation‐density quantification in silicon, involving a high‐resolution commercial dark‐field imaging device, a flatbed scanner. This method requires minimal surface preparation and can be performed on as‐cut 15.6 × 15.6 cm2wafers in less than 5 minutes. The method has been tested at a spatial resolution down to 250 µm. At 1 mm resolution, the average root mean square of the normalized error was 0.39. Flatbed scanner image of a defect‐etched 15.6 × 15.6 cm2silicon wafer (left) and the corresponding dislocation‐density map obtained using our technique (right). (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Needleman et al. outline and validate a low‐cost approach for dislocation‐density quantification in silicon, involving a high‐resolution commercial dark‐field imaging device, a flatbed scanner. This method requires minimal surface preparation and can be performed on as‐cut 15.6 × 15.6 cm2 wafers in less than five minutes.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201308150