Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealing (RTA) at a series of temperatures. It is found that the device performance of the nonopti...

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Bibliographic Details
Published in:Journal of electronic materials 2012-12, Vol.41 (12), p.3393-3401
Main Authors: Tan, S.L., Hunter, C.J., Zhang, S., Tan, L.J.J., Goh, Y.L., Ng, J.S., Marko, I.P., Sweeney, S.J., Adams, A.R., Allam, J., David, J.P.R.
Format: Article
Language:English
Subjects:
Annealing
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electrical engineering
Electronics and Microelectronics
Instrumentation
Materials Science
Optical and Electronic Materials
Optical properties
Semiconductors
Solid State Physics
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Summary:We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealing (RTA) at a series of temperatures. It is found that the device performance of the nonoptimally grown GaInNAs p + – i – n + structures, with nominal compositions of 10% In and 3.8% N, can be improved significantly by the RTA treatment to match that of optimally grown structures. The optimally annealed devices exhibit overall improvement in optical and electrical characteristics, including increased photoluminescence brightness, reduced density of deep-level traps, reduced series resistance resulting from the GaAs/GaInNAs heterointerface, lower dark current, and significantly lower background doping density, all of which can be attributed to the reduced structural disorder in the GaInNAs alloy.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-012-2245-9