In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation

An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this letter. By performing repeated oxidation and deoxidation procedures by using the AFM for four times, two V-shaped trenches are fabricated on the prepatterned mesas to isolate the ele...

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Bibliographic Details
Published in:IEEE electron device letters 2010-11, Vol.31 (11), p.1227-1229
Main Authors: CHUNG, Tung-Hsun, CHEN, Shu-Han, LIAO, Wen-Hsuan, LIN, Shih-Yen
Format: Article
Language:English
Subjects:
Anodizing
Applied sciences
Atomic force microscopy
Atomic force microscopy (AFM)
Channels
Devices
Electronics
Exact sciences and technology
Gallium arsenide
Gates
in-plane gate transistors
Lithography
Logic gates
Microelectronic fabrication (materials and surfaces technology)
Microscopy
Oxidation
Resistance
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Transistors
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Summary:An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this letter. By performing repeated oxidation and deoxidation procedures by using the AFM for four times, two V-shaped trenches are fabricated on the prepatterned mesas to isolate the electrical terminals of the device. Without exposing the channel region to the atmosphere, the device has exhibited standard transistor current-voltage characteristics in the 0-5 V range at room temperature, which may be advantageous for the future high-speed application of the device.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2068273