High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links

A monolithic integrated transimpedance amplifier for the receiver in a 40-Gb/s optical-fiber TDM system has been fabricated in an InP-based HBT technology. Despite its high gain (transimpedance of 2 k/spl Omega/ in the limiting mode, 10 k/spl Omega/ in the linear mode) the complete amplifier was rea...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2000-09, Vol.35 (9), p.1260-1265
Main Authors: Mullrich, J., Thurner, H., Mullner, E., Jensen, J.F., Stanchina, W.E., Kardos, M., Rein, H.-M.
Format: Article
Language:English
Subjects:
Dynamic range
Heterojunction bipolar transistors
Integrated optics
Optical amplifiers
Optical receivers
Semiconductor device measurement
Semiconductor optical amplifiers
Stimulated emission
Time division multiplexing
Voltage
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Summary:A monolithic integrated transimpedance amplifier for the receiver in a 40-Gb/s optical-fiber TDM system has been fabricated in an InP-based HBT technology. Despite its high gain (transimpedance of 2 k/spl Omega/ in the limiting mode, 10 k/spl Omega/ in the linear mode) the complete amplifier was realized on a single chip. Clear output eye diagrams were measured up to 43 Gb/s under realistic driving conditions. The voltage swing of 0.6 V/sub pp/ at the differential 50 /spl Omega/ output does not change within the demanded input dynamic range of 6 dB. At the upper input current level even 48 Gb/s were achieved. The power consumption is approximately 600 mW at a single supply voltage of -5.5 V.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.868033