Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET's

Selective dry etching of GaAs to AlGaAs (x = 0.25) using pure CCl 2 F 2 etching gas has been achieved. During reactive ion etching (RIE), the discharge has been analyzed by optical emission and mass spectroscopy. A high-selectivity ratio up to 1000, associated with a clean and anisotropic etching or...

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Published in:IEEE transactions on electron devices 1986-07, Vol.33 (7), p.934-937
Main Authors: Vatus, J., Chevrier, J., Delescluse, P., Rochette, J.-F.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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creator Vatus, J.
Chevrier, J.
Delescluse, P.
Rochette, J.-F.
description Selective dry etching of GaAs to AlGaAs (x = 0.25) using pure CCl 2 F 2 etching gas has been achieved. During reactive ion etching (RIE), the discharge has been analyzed by optical emission and mass spectroscopy. A high-selectivity ratio up to 1000, associated with a clean and anisotropic etching or an undercut of GaAs can be obtained by adjustment of the pressure. Selective RIE has been used to etch the n + GaAs cap layer of an n + GaAs/AlGaAs/GaAs heterostructure and to define the gate recess of discrete two-dimensional electron-gas FET's (TEGFET's). Results on low-noise TEGFET's fabricated by this technique are reported for the first time. Thanks to the reduction of side etching, very low source resistances have been obtained (less than 1 Ω . mm) for a source-to-gate distance up to 2 µm. Noise figures of 2 dB have been measured at 12 GHz with an associated gain of 8.3 dB for a gate length of 0.7 µm.
doi_str_mv 10.1109/T-ED.1986.22598
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subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET's
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