Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET's

Selective dry etching of GaAs to AlGaAs (x = 0.25) using pure CCl 2 F 2 etching gas has been achieved. During reactive ion etching (RIE), the discharge has been analyzed by optical emission and mass spectroscopy. A high-selectivity ratio up to 1000, associated with a clean and anisotropic etching or...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1986-07, Vol.33 (7), p.934-937
Main Authors: Vatus, J., Chevrier, J., Delescluse, P., Rochette, J.-F.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Selective dry etching of GaAs to AlGaAs (x = 0.25) using pure CCl 2 F 2 etching gas has been achieved. During reactive ion etching (RIE), the discharge has been analyzed by optical emission and mass spectroscopy. A high-selectivity ratio up to 1000, associated with a clean and anisotropic etching or an undercut of GaAs can be obtained by adjustment of the pressure. Selective RIE has been used to etch the n + GaAs cap layer of an n + GaAs/AlGaAs/GaAs heterostructure and to define the gate recess of discrete two-dimensional electron-gas FET's (TEGFET's). Results on low-noise TEGFET's fabricated by this technique are reported for the first time. Thanks to the reduction of side etching, very low source resistances have been obtained (less than 1 Ω . mm) for a source-to-gate distance up to 2 µm. Noise figures of 2 dB have been measured at 12 GHz with an associated gain of 8.3 dB for a gate length of 0.7 µm.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1986.22598