Polycrystalline silicon thin-film transistors on a novel 800°C glass substrate

A new polycrystalline silicon thin-film transistor (TFT) technology using a potentially low-cost glass substrate is reported. Transistors are made using modified conventional n-channel MOS processes at temperatures of 800°C or less, with a final hydrogen implantation step. These transistors show lea...

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Bibliographic Details
Published in:IEEE electron device letters 1986-11, Vol.7 (11), p.597-599
Main Authors: Troxell, J.R., Harrington, M.I., Erskine, J.C., Dumbaugh, W.H., Fehlner, F.P., Miller, R.A.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Glass
Hydrogen
Leakage current
Liquid crystal displays
MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Stability
Substrates
Temperature
Thin film transistors
Transistors
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Summary:A new polycrystalline silicon thin-film transistor (TFT) technology using a potentially low-cost glass substrate is reported. Transistors are made using modified conventional n-channel MOS processes at temperatures of 800°C or less, with a final hydrogen implantation step. These transistors show leakage currents of 2 × 10 -11 A/µm of channel width, ON-to-OFF current ratios of 1 × 10 4 at V ds = 9.0 V, and good dc stability. This combination of polycrystalline silicon transistors on potentially low-cost glass substrates offers a new option in the choice of active device technology for large-area flat-panel liquid crystal displays (LCD's).
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26486