Exciton line broadening in ZnSxSe1-x epilayers grown on GaAs by molecular-beam epitaxy

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Bibliographic Details
Published in:Journal of applied physics 1989-11, Vol.66 (10), p.4950-4957
Main Authors: NEWBURY, P. R, SHAHZAD, K, PETRUZELLO, J, CAMMACK, D. A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Online Access:Get full text
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.343767