Loading…

Experimental technology and performance of 0.1-μm-gate-length FETs operated at liquid-nitrogen temperature

Saved in:

Bibliographic Details
Published in:	IBM journal of research and development 1990-07, Vol.34 (4), p.452-465
Main Authors:	SAI-HALASZ, G. A, WORDEMAN, M. R, KERN, D. P, RISHTON, S. A, GANIN, E, CHANG, T. H. P, DENNARD, R. H
Format:	Article
Language:	English
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!