Electrical Degradation and Recovery of Low-Temperature Polycrystalline Silicon Thin-Film Transistors in Polycrystalline Silicon Plasma Process

The plasma-process-induced damage (PPID) of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) during the etching of the poly-Si film was investigated in this paper. The results reveal the relationship between the device degradation and the PPID during TFT liquid-crystal-...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2011-08, Vol.58 (8), p.2448-2455
Main Authors: CHANG, Jiun-Jye, CHANG-LIAO, Kuei-Shu, WANG, Tien-Ko, WU, Yung-Chun, LIN, Kao-Chao, CHEN, Chia-Yu, CHEN, Yu-Mou, TSENG, Jen-Pei, HUNG, Min-Feng
Format: Article
Language:English
Subjects:
Applied sciences
Charge
Damage
Degradation
Devices
Display
Electronics
Etching
Exact sciences and technology
Grain-boundary trap state
Leakage current
low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs)
Microelectronic fabrication (materials and surfaces technology)
negative-bias temperature instability (NBTI)
Plasma etching
plasma-process-induced damage (PPID)
Plasmas
Radio frequency
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Thin film transistors
Threshold voltage
Transistors
Trapping
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The plasma-process-induced damage (PPID) of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) during the etching of the poly-Si film was investigated in this paper. The results reveal the relationship between the device degradation and the PPID during TFT liquid-crystal-display fabrication. This degradation is caused in part by the damage at the edge of the poly-Si film in plasma exposure. The trapped-state densities N trap are measured to clarify the relationship between instability and plasma etching damages. The plasma-process condition substantially affects the PPID of the poly-Si etching process. The main mechanism is the generation of charge trapping states at the poly-Si grain boundary in the damaged edge of the TFT channel active region. The electrical recovery from the plasma damage is also studied with various postetching treatments. Hydrogen-base plasma treatment and laser anneal process are revealed to improve the device characteristics due to reduction of charge trapping states.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2153855