Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors

The temperature-dependent behaviour of the bandgap of mid- and long-wavelength as well as dual-colour (mid-/long-wavelength) infrared detectors based on InAs/GaSb strained layer superlattices (SLSs) with p-i-n and nBn designs has been investigated with temperature-dependent absorption, photoluminesc...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2011-02, Vol.44 (7), p.075102
Main Authors: Klein, B, Plis, E, Kutty, M N, Gautam, N, Albrecht, A, Myers, S, Krishna, S
Format: Article
Language:English
Subjects:
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Exact sciences and technology
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
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Summary:The temperature-dependent behaviour of the bandgap of mid- and long-wavelength as well as dual-colour (mid-/long-wavelength) infrared detectors based on InAs/GaSb strained layer superlattices (SLSs) with p-i-n and nBn designs has been investigated with temperature-dependent absorption, photoluminescence and spectral response techniques. Values of Varshni parameters, zero temperature bandgap E 0 and empirical coefficient α, were extracted and tabulated. The MWIR and LWIR superlattice detectors showed a temperature change of 0.325 meV K −1 and 0.282 meV K −1 , respectively. These values are a factor of two lower than that of HgCdTe and InSb, making them attractive for higher operating temperatures.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/44/7/075102