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TDDB and Pulse-Breakdown Studies of Si-Rich SiNx Antifuses and Antifuse-Based ROMs
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| Published in: | IEEE transactions on electron devices 2011, Vol.58 (1), p.224-228 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| Online Access: | Get full text |
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| container_end_page | 228 |
| container_issue | 1 |
| container_start_page | 224 |
| container_title | IEEE transactions on electron devices |
| container_volume | 58 |
| creator | KAPLAR, Robert J HABERMEHL, Scott D APODACA, Roger T HAVENER, Brad ROHERTY-OSMUN, Elizabeth |
| description | |
| doi_str_mv | 10.1109/TED.2010.2089057 |
| format | article |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2011, Vol.58 (1), p.224-228 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_23746848 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability |
| title | TDDB and Pulse-Breakdown Studies of Si-Rich SiNx Antifuses and Antifuse-Based ROMs |
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