TDDB and Pulse-Breakdown Studies of Si-Rich SiNx Antifuses and Antifuse-Based ROMs

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011, Vol.58 (1), p.224-228
Main Authors: KAPLAR, Robert J, HABERMEHL, Scott D, APODACA, Roger T, HAVENER, Brad, ROHERTY-OSMUN, Elizabeth
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing, measurement, noise and reliability
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2089057