Growth, Annealing Effects on Superconducting and Magnetic Properties, and Anisotropy of FeSe1-xTex ($0.5\leq x\leq 1$) Single Crystals

Single crystals of FeSe 1-x Te x ($0.5\leq x\leq 1$) have been grown by the Bridgman method. After annealing them at 400 \mbox{ \circ C} for 100 h in vacuum, single crystals of $x=0.5{\mbox{--}}0.9$ have exhibited bulk superconductivity. Anisotropic properties of the electrical resistivity and upper...

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Bibliographic Details
Published in:Journal of the Physical Society of Japan 2010-08, Vol.79 (8), p.084711-084711-5
Main Authors: Noji, Takashi, Suzuki, Takumi, Abe, Haruki, Adachi, Tadashi, Kato, Masatsune, Koike, Yoji
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Effects of material synthesis, crystal structure, and chemical composition
Exact sciences and technology
Mixed state, critical fields, and surface sheath
Physics
Properties of type I and type II superconductors
Superconductivity
Transition temperature variations
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Summary:Single crystals of FeSe 1-x Te x ($0.5\leq x\leq 1$) have been grown by the Bridgman method. After annealing them at 400 \mbox{ \circ C} for 100 h in vacuum, single crystals of $x=0.5{\mbox{--}}0.9$ have exhibited bulk superconductivity. Anisotropic properties of the electrical resistivity and upper critical field, $H_{\text{c2}}$, have been investigated for the single-crystal FeSe 1-x Te x with $x=0.6$. It has been found that the in-plane resistivity, $\rho_{ab}$, shows a metallic temperature-dependence, while the out-of-plane resistivity, $\rho_{c}$, shows a broad maximum around 100 K. The resistivity ratio, $\rho_{c}/\rho_{ab}$, is 44 and 70 at 290 K and just above the superconducting transition temperature, $T_{\text{c}}$, respectively. The anisotropic parameter, $\gamma\equiv H_{\text{c2}}^{\|}/H_{\text{c2}}^{\bot}$ (superscripts $\parallel$ and $\perp$ indicate field directions parallel and perpendicular to the $ab$-plane, respectively.), is estimated as 2.7 just below $T_{\text{c}}$.
ISSN:0031-9015
1347-4073
DOI:10.1143/JPSJ.79.084711