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A New 12-Term Open-Short-Load De-Embedding Method for Accurate On-Wafer Characterization of RF MOSFET Structures
A new algorithm for open-short-load de-embedding of on-wafer S -parameter measurements is presented. Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolvin...
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| Published in: | IEEE transactions on microwave theory and techniques 2010-02, Vol.58 (2), p.419-433 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c269t-778da47afcbd9108e6113b1bfe94e41a77976b50cd95cb8bd6da589f084d6c1d3 |
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| cites | cdi_FETCH-LOGICAL-c269t-778da47afcbd9108e6113b1bfe94e41a77976b50cd95cb8bd6da589f084d6c1d3 |
| container_end_page | 433 |
| container_issue | 2 |
| container_start_page | 419 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 58 |
| creator | Tiemeijer, L.F. Pijper, R.M.T. van Steenwijk, J.A. van der Heijden, E. |
| description | A new algorithm for open-short-load de-embedding of on-wafer S -parameter measurements is presented. Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolving a 12-term error model is equally accurate as the current more general 15-term approach, which requires five dummy structures. To demonstrate this, experimental results obtained for six different increasingly sophisticated on-wafer correction schemes using 2-8 different de-embedding standards and resolving between 8-22 error terms, using S -parameter data taken up to 110 GHz on 65- and 45-nm node MOSFET devices are compared. |
| doi_str_mv | 10.1109/TMTT.2009.2038453 |
| format | article |
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Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolving a 12-term error model is equally accurate as the current more general 15-term approach, which requires five dummy structures. To demonstrate this, experimental results obtained for six different increasingly sophisticated on-wafer correction schemes using 2-8 different de-embedding standards and resolving between 8-22 error terms, using S -parameter data taken up to 110 GHz on 65- and 45-nm node MOSFET devices are compared.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2009.2038453</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>45-nm node CMOS ; Applied sciences ; Calibration ; Circuit testing ; Crosstalk ; Design. Technologies. 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Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolving a 12-term error model is equally accurate as the current more general 15-term approach, which requires five dummy structures. To demonstrate this, experimental results obtained for six different increasingly sophisticated on-wafer correction schemes using 2-8 different de-embedding standards and resolving between 8-22 error terms, using S -parameter data taken up to 110 GHz on 65- and 45-nm node MOSFET devices are compared.</description><subject>45-nm node CMOS</subject><subject>Applied sciences</subject><subject>Calibration</subject><subject>Circuit testing</subject><subject>Crosstalk</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Error correction</subject><subject>Exact sciences and technology</subject><subject>Grounding</subject><subject>Integrated circuit measurements</subject><subject>Integrated circuits</subject><subject>MOSFET circuits</subject><subject>on-wafer microwave measurements</subject><subject>open-short-load de-embedding</subject><subject>Probes</subject><subject>Radio frequency</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolving a 12-term error model is equally accurate as the current more general 15-term approach, which requires five dummy structures. To demonstrate this, experimental results obtained for six different increasingly sophisticated on-wafer correction schemes using 2-8 different de-embedding standards and resolving between 8-22 error terms, using S -parameter data taken up to 110 GHz on 65- and 45-nm node MOSFET devices are compared.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2009.2038453</doi><tpages>15</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 2010-02, Vol.58 (2), p.419-433 |
| issn | 0018-9480 1557-9670 |
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| source | IEEE Electronic Library (IEL) Journals |
| subjects | 45-nm node CMOS Applied sciences Calibration Circuit testing Crosstalk Design. Technologies. Operation analysis. Testing Electronics Error correction Exact sciences and technology Grounding Integrated circuit measurements Integrated circuits MOSFET circuits on-wafer microwave measurements open-short-load de-embedding Probes Radio frequency Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability |
| title | A New 12-Term Open-Short-Load De-Embedding Method for Accurate On-Wafer Characterization of RF MOSFET Structures |
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