A New 12-Term Open-Short-Load De-Embedding Method for Accurate On-Wafer Characterization of RF MOSFET Structures

A new algorithm for open-short-load de-embedding of on-wafer S -parameter measurements is presented. Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolvin...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2010-02, Vol.58 (2), p.419-433
Main Authors: Tiemeijer, L.F., Pijper, R.M.T., van Steenwijk, J.A., van der Heijden, E.
Format: Article
Language:English
Subjects:
45-nm node CMOS
Applied sciences
Calibration
Circuit testing
Crosstalk
Design. Technologies. Operation analysis. Testing
Electronics
Error correction
Exact sciences and technology
Grounding
Integrated circuit measurements
Integrated circuits
MOSFET circuits
on-wafer microwave measurements
open-short-load de-embedding
Probes
Radio frequency
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing, measurement, noise and reliability
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Summary:A new algorithm for open-short-load de-embedding of on-wafer S -parameter measurements is presented. Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolving a 12-term error model is equally accurate as the current more general 15-term approach, which requires five dummy structures. To demonstrate this, experimental results obtained for six different increasingly sophisticated on-wafer correction schemes using 2-8 different de-embedding standards and resolving between 8-22 error terms, using S -parameter data taken up to 110 GHz on 65- and 45-nm node MOSFET devices are compared.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2009.2038453