CMOS Distributed Amplifiers With Extended Flat Bandwidth and Improved Input Matching Using Gate Line With Coupled Inductors

This paper presents a state-of-the-art distributed amplifier with coupled inductors in the gate line. The proposed coupled inductors, in conjunction with series-peaking inductors in cascode gain stages, provide bandwidth extension with flat gain response for the amplifier without any additional powe...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2009-12, Vol.57 (12), p.2862-2871
Main Authors: Entesari, K., Tavakoli, A.R., Helmy, A.
Format: Article
Language:English
Subjects:
Amplification
Amplifiers
Applied sciences
Bandwidth
Capacitance
Circuit properties
Complementary metal-oxide-semiconductor (CMOS)
coupled inductors
Design. Technologies. Operation analysis. Testing
Distributed amplifiers
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Energy consumption
Exact sciences and technology
Gates
High power amplifiers
Impedance matching
Inductors
Integrated circuits
Magnetic devices
Matching
monolithic microwave integrated circuit
Noise levels
Optical amplifiers
Performance gain
Power amplifiers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:This paper presents a state-of-the-art distributed amplifier with coupled inductors in the gate line. The proposed coupled inductors, in conjunction with series-peaking inductors in cascode gain stages, provide bandwidth extension with flat gain response for the amplifier without any additional power consumption. On the other hand, gate-inductor coupling improves the input matching of the amplifier considerably. The detailed analysis and design methodology for the proposed distributed amplifier are presented. The new four-stage distributed amplifier, fabricated using an IBM 0.18-¿m complementary-metal-oxide-semiconductor process, achieves a power gain of around 10 dB, input and output return losses better than 16 and 18 dB, respectively, a noise figure of 3.6-4.9 dB, and a power consumption of 21 mW over a 16-GHz flat 1-dB bandwidth. The measured IIP 3 of the amplifier is between 0.1 and 3.75 dBm across the entire band.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2009.2034044