Paramagnetism in Co-doped ZnO films

Co-doped ZnO films with various electron concentrations up to 4.61 x 10@@u19@ cm@@u-3@ at room temperature were prepared by pulsed laser deposition on a-plane sapphire substrates. Only paramagnetism was observed down to 2 K for all samples. X-ray magnetic circular dichroism measurements at 30 K conf...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2009-04, Vol.42 (8), p.085001
Main Authors: Xu, Qingyu, Zhou, Shengqiang, Markó, Daniel, Potzger, Kay, Fassbender, Jürgen, Vinnichenko, Mykola, Helm, Manfred, Hochmuth, Holger, Lorenz, Michael, Grundmann, Marius, Schmidt, Heidemarie
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Diamagnetism, paramagnetism and superparamagnetism
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
Magnetic properties and materials
Nonmetals
Physics
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Summary:Co-doped ZnO films with various electron concentrations up to 4.61 x 10@@u19@ cm@@u-3@ at room temperature were prepared by pulsed laser deposition on a-plane sapphire substrates. Only paramagnetism was observed down to 2 K for all samples. X-ray magnetic circular dichroism measurements at 30 K confirmed the paramagnetic properties of the doped Co@@u2+@ ions. The average magnetic moment is significantly smaller than the expected moment for Co@@u2+@ ions (@iL = 1.07, @iS = 3/2), mainly due to the antiferromagnetic exchange interaction between the neighbouring Co@@u2+@ ions in the ZnO matrix. Also clustering instead of a uniform distribution of Co@@u2+@ ions may play a role. The formation of Co clusters is hindered at higher substrate temperature during the thin film growth. A clear anomalous Hall effect was observed in the highly conducting Co-doped ZnO films at low temperatures up to 100 K.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/42/8/085001