Avalanche Noise Characteristics in Submicron InP Diodes

We report excess noise factors measured on a series of InP diodes with varying avalanche region thickness, covering a wide electric field range from 180 to 850 kV/cm. The increased significance of dead space in diodes with thin avalanche region thickness decreases the excess noise. An excess noise f...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2008-04, Vol.44 (4), p.378-382
Main Authors: Tan, L.J.J., Ng, J.S., Tan, C.H., David, J.P.R.
Format: Article
Language:English
Subjects:
Absorption
Acoustic microscopes
Applied sciences
Avalanche diodes
Avalanche multiplication
Charge carrier processes
dead space
Diodes
Electric fields
Electric variables measurement
Electronics
Exact sciences and technology
excess noise
Impact ionization
Indium phosphide
Indium phosphides
InP
Multiplication
Noise
Noise factor
Noise measurement
Optical noise
Optoelectronic devices
Semiconductor device noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thickness measurement
tunneling
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Summary:We report excess noise factors measured on a series of InP diodes with varying avalanche region thickness, covering a wide electric field range from 180 to 850 kV/cm. The increased significance of dead space in diodes with thin avalanche region thickness decreases the excess noise. An excess noise factor of F = 3.5 at multiplication factor M = 10 was measured, the lowest value reported so far for InP. The electric field dependence of impact ionization coefficients and threshold energies in InP have been determined using a non-local model to take into account the dead space effects. This work suggests that further optimization of InP separate absorption multiplication avalanche photodiodes (SAM APDs) could result in a noise performance comparable to InAlAs SAM APDs.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2007.914771